Transport Properties of Andreev Polarons in a Superconductor-Semiconductor-Superconductor Junction with Superlattice Structure

Transport properties of Andreev polarons in a superconductor-semiconductor-superconductor junction with superlattice structure.

Transport properties of a superconductor-semiconductor-superconductor (Su-Sm-Su) junction with superlattice structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio-frequency (rf) waves with the specific frequency of 1.77 GHz regardless of the superconducting materials and the junction geometries. Experimental data ar...

Transport properties of Andreev polarons in superconductor-semiconductor-superconductor junction with superlattice structure

Ryotaro Inoue, 2, ∗ Kenta Muranaga, Hideaki Takayanagi, 3 Eiichi Hanamura, Masafumi Jo, Tatsushi Akazaki, 2 and Ikuo Suemune 2 Dept. of Applied Physics, Tokyo Univ. of Science, Tokyo 162-8601, Japan. CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan. MANA, National Inst. for Materials Science, Tsukuba 305-0044, Japan. Japan Science and Technology Agency, Kawaguchi 332-0012, ...

Coherent diffusive transport mediated by Andreev reflections at V=Delta/e in a mesoscopic superconductor/semiconductor/superconductor junction

Andreev bound states and π-junction transition in a superconductor / quantum-dot / superconductor system

We study Andreev bound states and π-junction transition in a superconductor / quantum-dot / superconductor (S-QD-S) system by Green function method. We derive an equation to describe the Andreev bound states in S-QD-S system, and provide a unified understanding of the π-junction transition caused by three different mechanisms: (1) Zeeman splitting. For QD with two spin levels E↑ and E↓, we find...

Transport Properties of a Superconductor - Semiconductor Ohmic Contact

We report electrical measurements of ' a sandwich structure consisting of a niobium electrode in contact with a thin lightly doped n type InGaAs layer. The bottom of the sandwich is a degenerate layer of n-type InGaAs used to collect the current. The semiconductor layers are grown by molecular beam epitaxy (MBB). These three layers are the essence of the proposed superconducting-base, semicondu...